Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs
Author:
Affiliation:
1. School of Advanced Technology, Xi'an Jiaotong-Liverpool University,Suzhou,China,215123
2. Suzhou Institute of Nano-Tech and Nano-Bionics, CAS,Nanofabrication facility,Suzhou,Jiangsu,China,215123
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579593.pdf?arnumber=10579593
Reference11 articles.
1. GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices
2. Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
3. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
4. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
5. Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique
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