Logic Compatible High-Performance Ferroelectric Transistor Memory
Author:
Affiliation:
1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
2. Department of Microsystems Engineering, Rochester Institute of Technology, Rochester, NY, USA
Funder
Applications and Systems Driven Center for Energy-Efficient Integrated NanoTechnologies (ASCENT), one of six centers in Joint University Microelectronics Program (JUMP), sponsored
Defense Advanced Research Projects Agency (DARPA) and the Semiconductor Research Corporation
Innovative Materials and Processes for Accelerated Compute Technologies (IMPACT) Center in Nanoelectronic Computing Research (nCORE), sponsored
SRC
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9721042/09701366.pdf?arnumber=9701366
Reference21 articles.
1. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?
2. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
3. High Speed Memory Operation in Channel-Last, Back-gated Ferroelectric Transistors
4. Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application
5. Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2024-02
2. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry;The Journal of Physical Chemistry Letters;2024-01-22
3. High-speed emerging memories for AI hardware accelerators;Nature Reviews Electrical Engineering;2024-01-11
4. Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility;Advanced Intelligent Systems;2024-01-08
5. Comprehensive Modeling of Switching Behavior in BEOL FeFET for Monolithic 3-D Integration;IEEE Transactions on Electron Devices;2024-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3