Comprehensive Modeling of Switching Behavior in BEOL FeFET for Monolithic 3-D Integration-Reference-Cited by-同舟云学术

Comprehensive Modeling of Switching Behavior in BEOL FeFET for Monolithic 3-D Integration

Published:2024-01 Issue:1 Volume:71 Page:368-373
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Shubham¹^ORCID,Thomann Simon¹^ORCID,Prakash Om²^ORCID,Ni Kai²^ORCID,Chauhan Yogesh Singh³^ORCID,Amrouch Hussam⁴^ORCID

Affiliation:

1. Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany

2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA

3. Indian Institute of Technology Kanpur (IITK), Kanpur, India

4. TUM School of Computation, Information and Technology, Munich Institute of Robotics and Machine Intelligence, Technical University of Munich, Munich, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10285718.pdf?arnumber=10285718

Reference28 articles.

1. Monolithic 3D Integration: A Path from Concept to Reality

2. Monolithic 3D Integration of High Endurance Multi-Bit Ferroelectric FET for Accelerating Compute-In-Memory

3. 3D sequential integration opportunities and technology optimization

4. High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET

5. Double-Gate W-Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM

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2. Monolithic 3D Integration using BEOL FeFET: Reliability, Thermal Effects, and DNN Accuracy;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Benchmarking IWO-based Logic Circuits for Monolithic 3D Integration;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. FeFET Reliability Modeling for In-Memory Computing: Challenges, Perspective, and Emerging Trends;IEEE Transactions on Electron Devices;2024-01