Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide-Reference-Cited by-同舟云学术

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Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide

Published:2024-02 Issue:2 Volume:71 Page:323-331
ISSN:0885-3010
Container-title:IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
language:
Short-container-title:IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

Author:

Henry M. David¹^ORCID,Smith Sean Weston¹^ORCID,Fields Shelby S.²,Jaszewski Samantha T.²^ORCID,Esteves Giovanni¹,Heinrich Helge³,Ihlefeld Jon F.²^ORCID

Affiliation:

1. Sandia National Laboratories, Albuquerque, NM, USA

2. Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA

3. Nanoscale Materials Characterization Facility, University of Virginia, Charlottesville, VA, USA

Funder

U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers program

U.S. National Science Foundation Graduate Research Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Acoustics and Ultrasonics,Instrumentation

Link

https://ieeexplore.ieee.org/ielam/58/10415059/10250965-aam.pdf

Reference31 articles.

1. Review and perspective on ferroelectric HfO2-based thin films for memory applications

2. HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

3. Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes

4. Stabilization of ferroelectric phase of Hf0.58Zr0.42O2on NbN at 4 K

5. Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State Storage

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