HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications-Reference-Cited by-同舟云学术

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HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

Published:2020-12-12 Issue: Volume: Page:
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Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Saitoh Masumi,Ichihara Reika,Yamaguchi Marina,Suzuki Kunifumi,Takano Keisuke,Akari Keisuke,Takahashi Kota,Kamiya Yuta,Matsuo Kazuhiro,Kamimuta Yuuichi,Sakuma Kiwamu,Ota Kensuke,Fujii Shosuke

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372106.pdf?arnumber=9372106

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing;Ceramics International;2024-10

2. High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics;Nature Communications;2024-03-27

3. Understanding of polarization reversal and charge trapping under imprint in HfO₂-FeFET by charge component analysis;Japanese Journal of Applied Physics;2024-03-18

4. Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2024-02

5. Recovery of cycling-induced degradation of interfacial SiO₂ in HfO₂-FeFET and its impact on retention characteristics;Japanese Journal of Applied Physics;2024-01-08

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