Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics

Abstract

Abstract A detailed understanding of cycling induced degradation of interfacial SiO2 in HfO2-FeFET devices is presented. By direct observation of electron trapping to cycling-generated trap sites in various time domains, we found that trap sites disappear over time. This recovery of the degradation has a non-negligible impact on the retention characteristics after cycling.