Stabilization of ferroelectric phase of Hf0.58Zr0.42O2on NbN at 4 K-Reference-Cited by-同舟云学术

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Stabilization of ferroelectric phase of Hf0.58Zr0.42O2on NbN at 4 K

Published:2019-03-04 Issue:9 Volume:114 Page:092903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Henry M. D.¹,Smith S. W.¹,Lewis R. M.¹,Ihlefeld J. F.²³^ORCID

Affiliation:

1. Sandia National Laboratories, PO Box 5800 MS 1084 Albuquerque, New Mexico 87185, USA

2. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

3. Charles L . Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

US department of energy nation nuclear security administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5052435

Reference27 articles.

1. Beyond CMOS computing with spin and polarization

2. Reconfigurable Memristive Device Technologies

3. Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls

4. Ferroelectricity in hafnium oxide thin films

5. Stabilizing the ferroelectric phase in doped hafnium oxide

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1. Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature;Journal of Applied Physics;2024-09-09

2. Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures;Frontiers in Nanotechnology;2024-05-15

3. Ferroelectric Hf_0.5Zr_0.5O₂ for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures;Advanced Electronic Materials;2024-05-06

4. Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes;Journal of Applied Physics;2024-03-04

5. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition;Journal of Semiconductors;2024-03-01

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