Affiliation:
1. Hangzhou Institute of Technology and School of Microelectronics, Xidian University 1 , Xi’an 710071, China
2. Center of Computational Materials, Zhejiang Lab 2 , Hangzhou 311121, China
Abstract
We have characterized polarization switching kinetics of Hf0.5Zr0.5O2 (HZO) at cryogenic temperature (T) down to 100 K. By the nucleation-limited-switching model with Lorentzian distribution fittings, the dependences of the average switching time (log τ1) and switching time distribution (ω) on T are extracted. As T decreases from 300 to 100 K, log τ1 first rapidly decreases and then gradually stabilizes. Meanwhile, ω exhibits different trends under different external electric fields (Eext), decreasing under low Eext while increasing under high Eext, eventually stabilizing at non-zero constants. With the further decrease in T (<100 K), log τ1 and ω exhibited by HZO are almost unchanged, indicating the intrinsic properties of ferroelectric multiple domains, which are different from the prediction in previous literature studies that log τ1 and ω will linearly decrease as T decreases.
Funder
National Natural Science Foundation of China
Zhejiang Provincial Natural Science Foundation
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