Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature

Author:

Xu Jiacheng12ORCID,Shen Rongzong2ORCID,Qian Haoji12ORCID,Lin Gaobo2,Gu Jiani2ORCID,Rong Jian2,Liu Huan12ORCID,Ding Yian1,Zhang Miaomiao1,Liu Yan1,Jin Chengji12ORCID,Chen Jiajia12ORCID,Han Genquan1

Affiliation:

1. Hangzhou Institute of Technology and School of Microelectronics, Xidian University 1 , Xi’an 710071, China

2. Center of Computational Materials, Zhejiang Lab 2 , Hangzhou 311121, China

Abstract

We have characterized polarization switching kinetics of Hf0.5Zr0.5O2 (HZO) at cryogenic temperature (T) down to 100 K. By the nucleation-limited-switching model with Lorentzian distribution fittings, the dependences of the average switching time (log τ1) and switching time distribution (ω) on T are extracted. As T decreases from 300 to 100 K, log τ1 first rapidly decreases and then gradually stabilizes. Meanwhile, ω exhibits different trends under different external electric fields (Eext), decreasing under low Eext while increasing under high Eext, eventually stabilizing at non-zero constants. With the further decrease in T (<100 K), log τ1 and ω exhibited by HZO are almost unchanged, indicating the intrinsic properties of ferroelectric multiple domains, which are different from the prediction in previous literature studies that log τ1 and ω will linearly decrease as T decreases.

Funder

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation

Publisher

AIP Publishing

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