XNOR-Bitcount Operation Exploiting Computing-In-Memory With STT-MRAMs

Author:

Musello Ariana1ORCID,Garzón Esteban2ORCID,Lanuzza Marco2ORCID,Prócel Luis Miguel3ORCID,Taco Ramiro3ORCID

Affiliation:

1. Electronic Design Automation Group, Synopsys Chile Ltda, Santiago de Chile, Chile

2. Department of Computer Engineering, Modeling, Electronics and Systems, University of Calabria, Rende, Italy

3. Instituto de Micro y Nanoelectrónica, Universidad San Francisco de Quito, Quito, Ecuador

Funder

Italian Ministry of University and Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Improving Reliability of STT-MRAM-Based Smart Material Implication;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. Compact Write-Based Computing-in-Memory (CIM) Using High Speed Switching (HSS) MRAM;2024 9th International Conference on Electronic Technology and Information Science (ICETIS);2024-05-17

3. A High Throughput In-MRAM-Computing Scheme Using Hybrid p-SOT-MTJ/GAA-CNTFET;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-02

4. A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT‐MTJ;IET Circuits, Devices & Systems;2024-01

5. RSACIM: Resistance Summation Analog Computing in Memory With Accuracy Optimization Scheme Based on MRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

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