Field-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy-Reference-Cited by-同舟云学术

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Field-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy

Published:2021 Issue: Volume:12 Page:1-4
ISSN:1949-307X
Container-title:IEEE Magnetics Letters
language:
Short-container-title:IEEE Magn. Lett.

Author:

Cutugno Francesco,Garzon Esteban^ORCID,De Rose Raffaele^ORCID,Finocchio Giovanni^ORCID,Lanuzza Marco^ORCID,Carpentieri Mario^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5165412/9381483/09565328.pdf?arnumber=9565328

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Voltage-Divider-Based Binary and Ternary Content-Addressable Memory (CAM) Exploiting Double-Barrier Magnetic Tunnel Junction;2023 IEEE Seventh Ecuador Technical Chapters Meeting (ECTM);2023-10-10

2. XNOR-Bitcount Operation Exploiting Computing-In-Memory With STT-MRAMs;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-03

3. Performance Benchmarking of FinFET- and TFET-Based STT-MRAM Bitcells Operating at Ultra-Low Voltages;2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS);2023-02-27

4. Exploiting TFET-based technology for energy-efficient STT-MRAM cells;INT J APPL ELECTROM;2023

5. DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems;2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS);2022-03-01

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