Study of Endurance Performance of SiO<sub>2</sub> Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO<sub>2</sub> Ferroelectric Layer-Reference-Cited by-同舟云学术

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Study of Endurance Performance of SiO₂ Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO₂ Ferroelectric Layer

Published:2024-08 Issue:8 Volume:71 Page:4619-4625
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Agarwal A.¹^ORCID,Walke A. M.²^ORCID,Ronchi N.²^ORCID,Kao K.-H.¹^ORCID,Van Houdt J.³^ORCID

Affiliation:

1. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

2. IMEC, Leuven, Belgium

3. IMEC and KU Leuven, Leuven, Belgium

Funder

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10557625.pdf?arnumber=10557625

Reference34 articles.

1. Dielectric constant enhancement due to Si incorporation into HfO2

2. Phase transitions in ferroelectric silicon doped hafnium oxide

3. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

4. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

5. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

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