Phase transitions in ferroelectric silicon doped hafnium oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3636434
Reference15 articles.
1. Ferro electric-materials as storage elements for digital computers and switching systems
2. Ferroelectric thin films: Review of materials, properties, and applications
3. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
4. Ferroelectricity in hafnium oxide thin films
5. Thermodynamic stability of binary oxides in contact with silicon
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