Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors-Reference-Cited by-同舟云学术

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Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
language:
Short-container-title:

Author:

Boscke T. S.¹,Muller J.²,Brauhaus D.³,Schroder U.⁴,Bottger U.³

Affiliation:

1. Löberwallgraben 2, 99096 Erfurt, Germany

2. Fraunhofer Fraunhofer Center for Nanoelectronic Technology, Dresden, Germany

3. RWTH Aachen, IWE II, Germany

4. Namlab gGmbH, Dresden, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131606.pdf?arnumber=6131606

Cited by 184 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

2. In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model;IEEE Transactions on Electron Devices;2024-09

3. Study of Endurance Performance of SiO₂ Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO₂ Ferroelectric Layer;IEEE Transactions on Electron Devices;2024-08

4. Strain Control of (001)-Polar-Axis-Oriented Epitaxial Y-Doped HfO₂ Thin Films;ACS Applied Electronic Materials;2024-07-25

5. New-Generation Ferroelectric AlScN Materials;Nano-Micro Letters;2024-06-25

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