From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices-Reference-Cited by-同舟云学术

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Published:2013-12 Issue:12 Volume:60 Page:4199-4205
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mueller Stefan¹,Muller Johannes²,Hoffmann Raik²,Yurchuk Ekaterina¹,Schlosser Till³,Boschke Roman³,Paul Jan²,Goldbach Matthias³,Herrmann Tom³,Zaka Alban³,Schroder Uwe¹,Mikolajick Thomas¹

Affiliation:

1. NaMLab gGmbH, Dresden, Germany

2. Fraunhofer CNT, Dresden, Germany

3. Globalfoundries Dresden Module One LLC & Co. KG, Dresden, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6665013/06623099.pdf?arnumber=6623099

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