Dielectric constant enhancement due to Si incorporation into HfO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2355471
Reference12 articles.
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3. Permittivity increase of yttrium-doped HfO2 through structural phase transformation
4. Extended Abstract of the 2004 International Conference on Solid State Devices and Materials;Tomida K.,2004
5. Infrared Absorption Study of HfO2 and HfO2/Si Interface Ranging from 200cm−1 to 2000cm−1
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