Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films-Reference-Cited by-同舟云学术

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Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Published:2013-04 Issue: Volume:533 Page:88-92
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yurchuk Ekaterina,Müller Johannes,Knebel Steve,Sundqvist Jonas,Graham Andrew P.,Melde Thomas,Schröder Uwe,Mikolajick Thomas

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. The Electric and Optical Behavior of BaTiO3Single-Domain Crystals

2. A new solid state memory resistor

3. FeRAM technology for high density applications

4. Proceedings of the European Solid State Device Research Conference;Hatanaka,2009

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