Reduced Dynamic Gate Pulse Stress Instability in Dual Gate a-InGaZnO Thin Film Transistors-Reference-Cited by-同舟云学术

Reduced Dynamic Gate Pulse Stress Instability in Dual Gate a-InGaZnO Thin Film Transistors

Author:

Priyadarshi Sunaina¹^ORCID,Billah Mohammad Masum²^ORCID,Lim Taebin¹^ORCID,Urmi Sadia Sayed¹^ORCID,Jang Jin¹^ORCID

Affiliation:

1. Department of Information Display, Advanced Display Research Center (ADRC), Kyung Hee University, Seoul, South Korea

2. Department of Electrical and Electronic Engineering, Islamic University of Technology, Gazipur, Bangladesh

Funder

Ministry of Trade, Industry and Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference21 articles.

5. Unique phenomenon in degradation of amorphous In2O3–Ga2O3–ZnO thin-film transistors under dynamic stress;fuji;Appl Phys Exp,2011

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5. Investigations on the Light-Induced Degradation of P-Channel Poly-Silicon Thin Film Transistors;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24