A Compact DC–DC Converter Using Low-Temperature Poly-Si Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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A Compact DC–DC Converter Using Low-Temperature Poly-Si Oxide Thin-Film Transistors

Published:2023-10 Issue:10 Volume:44 Page:1640-1643
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Priyadarshi Sunaina¹^ORCID,Rahaman Abidur¹^ORCID,Billah Mohammad Masum²^ORCID,Nahar Sabiqun¹,Jang Jin¹^ORCID

Affiliation:

1. Department of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South Korea

2. Department of Electrical and Electronic Engineering, Islamic University of Technology, Gazipur, Bangladesh

Funder

Technology Innovation Program through the Ministry of Trade, Industry and Energy (MOTIE), South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10265125/10246026.pdf?arnumber=10246026

Reference16 articles.

1. Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs

2. P‐45: High Efficiency DC‐DC converter for IT OLED Displays

3. High-Performance Dual Gate Amorphous InGaZnO Thin Film Transistor With Top Gate to Drain Offset

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1. High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics;IEEE Journal of the Electron Devices Society;2024

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