Investigations on the Light-Induced Degradation of P-Channel Poly-Silicon Thin Film Transistors-Reference-Cited by-同舟云学术

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Investigations on the Light-Induced Degradation of P-Channel Poly-Silicon Thin Film Transistors

Published:2023-07-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Zhang Yin¹,Wang Huaisheng¹,Wang Mingxiang¹,Zhang Dongli¹,Lv Nannan¹,Shan Qi²

Affiliation:

1. Soochow University,School of Electronic and Information Engineering,Suzhou,China,215006

2. Visionox Technology Inc.,Suzhou,China,215000

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Jiangsu Provincial Key Research and Development Program

Fudan University

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249180.pdf?arnumber=10249180

Reference17 articles.

1. Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration

2. Self-heating enhanced charge trapping effect for InGaZnO thin film transistor;chen;Applied Physics Letters,2012

3. Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors

4. Reduced Dynamic Gate Pulse Stress Instability in Dual Gate a-InGaZnO Thin Film Transistors

5. Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays;kim;Scientific Reports,2021

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