Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration
Author:
Affiliation:
1. School of Electronic and Computer Engineering, Peking University, Shenzhen, China
2. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong, SAR, China
Funder
Shenzhen Research Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9780469/09771071.pdf?arnumber=9771071
Reference55 articles.
1. Electronic Defects in Amorphous Oxide Semiconductors: A Review
2. Investigation of defect generation and annihilation in IGZO TFTs during practical stress conditions: illumination and electrical bias
3. Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
4. Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer
5. Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors
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