Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration-Reference-Cited by-同舟云学术

Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration

Published:2022-06 Issue:6 Volume:69 Page:3206-3212
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Pengfei¹^ORCID,Liu Yunfei¹,Xia Zhihe²^ORCID,Wang Yunping¹,Zhou Xiaoliang¹^ORCID,Shi Runxiao²^ORCID,Yeung Fion Sze Yan²^ORCID,Wong Man²^ORCID,Kwok Hoi Sing²,Zhang Shengdong¹^ORCID,Lu Lei¹^ORCID

Affiliation:

1. School of Electronic and Computer Engineering, Peking University, Shenzhen, China

2. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong, SAR, China

Funder

Shenzhen Research Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09771071.pdf?arnumber=9771071

Reference55 articles.

1. Electronic Defects in Amorphous Oxide Semiconductors: A Review

2. Investigation of defect generation and annihilation in IGZO TFTs during practical stress conditions: illumination and electrical bias

3. Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors

4. Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

5. Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

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