The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization-Reference-Cited by-同舟云学术

The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization

Published:2024-05 Issue:5 Volume:71 Page:3002-3008
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Zhiyu¹,Kang Lu²,Zhao Jinxiu¹^ORCID,Yin Yue¹,Wang Ziheng¹,Yu Jun³^ORCID,Li Yuan³^ORCID,Yi Guangzheng³^ORCID,Nathan Arokia³^ORCID,Li Xiuyan¹^ORCID,Wu Ying²,Xu Jeffrey²,Si Mengwei¹^ORCID

Affiliation:

1. School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China

2. Huawei Technologies Company Ltd., Shenzhen, China

3. School of Information Science and Engineering, Shandong University, Qingdao, China

Funder

National Key Research and Development Program of China

Shanghai Pilot Program for Basic Research-Shanghai Jiao Tong University

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10472970.pdf?arnumber=10472970

Reference36 articles.

1. Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

2. Nanometre-thin indium tin oxide for advanced high-performance electronics

3. BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with Ion = 370μA/μm, SS = 73mV/dec and Ion /Ioff Ratio > 4×109

4. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

5. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack

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