Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer-Reference-Cited by-同舟云学术

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Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Published:2016-05-23 Issue:21 Volume:108 Page:213501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Abliz Ablat¹,Wang Jingli¹,Xu Lei¹,Wan Da¹,Liao Lei¹,Ye Cong²,Liu Chuansheng¹,Jiang Changzhong¹,Chen Huipeng³^ORCID,Guo Tailiang³

Affiliation:

1. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China

2. Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China

3. Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4952445

Reference27 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

3. High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

4. Improved Electrical Stability in the Al Doped ZnO Thin-Film-Transistors Grown by Atomic Layer Deposition

5. Effect of gallium content on bias stress stability of solution-deposited Ga–Sn–Zn–O semiconductor transistors

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1. Rational Design of Different Ga Content Bilayer InGaZnO Thin-Film Transistors With Al₂O₃/HfO₂ Passivation Layer;IEEE Transactions on Electron Devices;2024-05

2. 35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors;SID Symposium Digest of Technical Papers;2024-04

3. Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT;Journal of Information Display;2023-12-15

4. Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels;IEEE Transactions on Electron Devices;2023-08

5. Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system;Journal of Vacuum Science & Technology A;2023-07-11

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