Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs-Reference-Cited by-同舟云学术

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Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs

Published:2012-02-25 Issue:1 Volume:13 Page:47-49
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Kim Yu-Mi,Jeong Kwang-Seok,Yun Ho-Jin,Yang Seung-Dong,Lee Sang-Youl,Lee Hi-Deok,Lee Ga-Won

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO201208636392710.pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduced Dynamic Gate Pulse Stress Instability in Dual Gate a-InGaZnO Thin Film Transistors;IEEE Electron Device Letters;2023-03

2. Analysis of the valence state of tin in ZnSnOx thin-film transistors;Journal of Materials Science: Materials in Electronics;2022-10-14

3. Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors;Materials Research Bulletin;2021-07

4. Abnormal double-hump phenomenon in amorphous In-Ga-Zn-O thin-film transistor under positive gate bias temperature stress;Solid-State Electronics;2020-10

5. Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors;Solid-State Electronics;2020-08

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