Interlayer Engineering to Achieve <1 m<sup>2</sup>K/GW Thermal Boundary Resistances to Diamond for Effective Device Cooling-Reference-Cited by-同舟云学术

Interlayer Engineering to Achieve <1 m²K/GW Thermal Boundary Resistances to Diamond for Effective Device Cooling

Published:2023-12-09 Issue: Volume:13 Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Woo K.¹,Malakoutian M.¹,Jo Y.²,Zheng X.³,Pfeifer T.⁴,Mandia R.⁵,Hwang T.²,Aller H.⁶,Field D.³,Kasperovich A.¹,Saraswat D.¹,Smith D.⁵,Hopkins P.⁴,Graham S.⁶,Kuball M.³,Cho K.²,Chowdhury S.¹

Affiliation:

1. Stanford University,Stanford,CA,USA

2. UT Dallas,Dallas,TX,USA

3. UoB,Bristol,UK

4. UVA,Charlottesville,VA,USA

5. ASU,Tempe,AZ,USA

6. UMD,College Park,MD,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413734.pdf?arnumber=10413734

Reference12 articles.

1. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

2. Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

3. Phonon conduction in GaN-diamond composite substrates

4. Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide

5. Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces;Advanced Electronic Materials;2024-07-08

2. Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth;Functional Diamond;2024-04-12

3. Well-matched vibrations cool electronic hot spots;Nature;2024-03-05