Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling-Reference-Cited by-同舟云学术

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

Published:2021-12-07 Issue:50 Volume:13 Page:60553-60560
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Malakoutian Mohamadali¹^ORCID,Field Daniel E.²^ORCID,Hines Nicholas J.³,Pasayat Shubhra⁴,Graham Samuel³^ORCID,Kuball Martin²^ORCID,Chowdhury Srabanti¹

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305-6104, United States

2. Center for Device Thermography and Reliability, University of Bristol, Bristol BS8 1TL, U.K.

3. George W. Woodruff School of Mechanical Engineering and Heat Lab, Georgia Institute of Technology, Atlanta, Georgia 30332-0405, United States

4. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States

Funder

Office of Naval Research

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c13833

Reference58 articles.

1. Wu, Y.F.; Moore, M.; Saxler, A.; Wisleder, T.; Parikh, P. 40-W/Mm Double Field-Plated GaN HEMTs, Device Research Conference─Conference Digest, DRC, State College, PA, USA, 2006; pp 151–152.

2. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

3. Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs

4. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

5. AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

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