Phonon conduction in GaN-diamond composite substrates-Reference-Cited by-同舟云学术

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Phonon conduction in GaN-diamond composite substrates

Published:2017-02-07 Issue:5 Volume:121 Page:055105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cho Jungwan¹²^ORCID,Francis Daniel³,Altman David H.⁴,Asheghi Mehdi¹,Goodson Kenneth E.¹

Affiliation:

1. Department of Mechanical Engineering, Stanford University, Stanford, California 94305, USA

2. Department of Mechanical Engineering, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 17104, South Korea

3. Element Six Technologies, Santa Clara, California 95054, USA

4. Raytheon Company, Andover, Massachusetts 02451, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4975468

Reference71 articles.

1. Heat Generation and Transport in Nanometer-Scale Transistors

2. Nanoscale thermal transport. II. 2003–2012

3. Cool electronics

4. NEAR-JUNCTION THERMAL MANAGEMENT: THERMAL CONDUCTION IN GALLIUM NITRIDE COMPOSITE SUBSTRATES

5. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

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