4.5 kV Double-gate RC-IEGT with Hole Control Gate
Author:
Affiliation:
1. Toshiba Electric Devices & Storage Corporation,Semiconductor Division
2. Toshiba Corporation,Research & Development Center,Kawasaki,Japan,212-8583
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813647.pdf?arnumber=9813647
Reference12 articles.
1. A Nobel Hybrid Power Module with Dual Side-gate HiGT and SiC-SBD;takeuchi;Proc ISPSD’17,0
2. Injection control technique for high speed switching with a double gate PNM-IGBT
3. An innovative silicon power device (i-Si) through time and space control of a stored carrier (TASC)
4. A 1000A 6.5kV Power Module Enabled by Reverse-Conducting Trench-IGBT-Technology;werber;Proc PCIM’15,0
5. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology
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1. Switching Loss Reduction in IGBTs by Multi-gate Control;IEEJ Transactions on Electronics, Information and Systems;2024-03-01
2. An iTFET with Control Gate for Low Power Applications in RF and Digital Circuits;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24
3. Structural parameter analysis on 6.5 kV integrated time and space carrier controllable dual-gate HiGT (i-TASC);Japanese Journal of Applied Physics;2023-06-01
4. A High Schottky Barrier iTFET with Control Gate for Low Power Application;2023-05-31
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