Injection control technique for high speed switching with a double gate PNM-IGBT-Reference-Cited by-同舟云学术

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Injection control technique for high speed switching with a double gate PNM-IGBT

Published:2013-05 Issue: Volume: Page:
ISSN:
Container-title:2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Sumitomo Masakiyo,Sakane Hiroki,Arakawa Kazuki,Higuchi Yasushi,Matsui Masaki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6684693/6694389/06694392.pdf?arnumber=6694392

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of Split Double Gate $\text{CSTBT}^{\text{TM}}$ for Switching Loss Reduction;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Impact of Scaling on Back-Gate-Controlled IGBT (BC-IGBT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01

3. High-conductivity IGBT with Time and Space Control of Stored Carrier (TASC HiGT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01

4. Switching Loss Reduction in IGBTs by Multi-gate Control;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

5. Grid-patterned trench insulated gate bipolar transistor for 1.2 kV hybrid/plug-in hybrid electric vehicle silicon power devices;Japanese Journal of Applied Physics;2024-01-05

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