High-conductivity IGBT with Time and Space Control of Stored Carrier (TASC HiGT)-Reference-Cited by-同舟云学术

High-conductivity IGBT with Time and Space Control of Stored Carrier (TASC HiGT)

Published:2024-03-01 Issue:3 Volume:144 Page:221-227
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans. EIS

Author:

Miyoshi Tomoyuki¹,Suzuki Hiroshi¹,Hirao Takashi¹,Takada Yusuke¹,Furukawa Tomoyasu¹,Mori Mutsuhiro²

Affiliation:

1. Research & Development Group, Hitachi, Ltd.

2. Railway Systems Business Unit, Hitachi, Ltd.

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Link

https://www.jstage.jst.go.jp/article/ieejeiss/144/3/144_221/_pdf

Reference17 articles.

1. (1) M. Mori, N. Sakurai, K. Hanaoka, Y. Nakazawa, T. Kurosu, T. Shigemura, and H. Ohkubo : “A new generation IGBT module with low loss, soft switch and small package”, Proc. Int. Power Electronics Conf., pp. 916-920 (1995)

2. (2) M. Mori, K. Oyama, T. Arai, J. Sakano, Y. Nishimura, K. Masuda, K. Saito, Y. Uchino, and H. Homma : “A planar-gate high-conductivity IGBT (HiGT) with hole-barrier layer”, IEEE Trans. Electron Devices, Vol. 54, pp. 1515-1520 (2007)

3. (3) M. Mori, K. Oyama, Y. Kohno, J. Sakano, J. Uruno, K. Ishikawa, and D. Kawase : “A trench-gate high-conductivity IGBT (HiGT) with short-circuit capability”, IEEE Trans. Electron Devices, Vol. 54, pp. 2011-2016 (2007)

4. (4) K. Oyama, Y. Kohno, J. Sakano, J. Uruno, K. Ishikawa, D. Kawase, and M. Mori : “Novel 600-V trench high-conductivity IGBT (trench HiGT) with short-circuit capability”, Proc. 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 417-420 (2001)

5. (5) M. Shiraishi, T. Furukawa, S. Watanabe, T. Arai, and M. Mori : “Side gate HiGT with low dv/dt noise and low loss”, Proc. 28^th ISPSD, pp. 199-202 (2016)