Side gate HiGT with low dv/dt noise and low loss
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7509008/7520753/07520812.pdf?arnumber=7520812
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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4. High-conductivity IGBT with Time and Space Control of Stored Carrier (TASC HiGT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01
5. Structural parameter analysis on 6.5 kV integrated time and space carrier controllable dual-gate HiGT (i-TASC);Japanese Journal of Applied Physics;2023-06-01
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