Switching Loss Reduction in IGBTs by Multi-gate Control-Reference-Cited by-同舟云学术

Switching Loss Reduction in IGBTs by Multi-gate Control

Published:2024-03-01 Issue:3 Volume:144 Page:212-216
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans. EIS

Author:

Gejo Ryohei¹,Sakano Tatsunori²,Iwakaji Yoko¹

Affiliation:

1. Toshiba Electronic Devices & Storage Corporation

2. Corporate Reserch & Development Center, Toshiba Corporation

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Link

https://www.jstage.jst.go.jp/article/ieejeiss/144/3/144_212/_pdf

Reference9 articles.

1. (1) M. Kitagawa, I. Omura, S. Hasegawa, T. Inoue, and A. Nakagawa : “A 4500V Injection Enhaced Insulated Gate Bipolar Transistor (IEGT) Operating in a Mode Similar to a Thyristor”, IEDM'93 technical digest, pp. 679-682 (1993)

2. (2) T. Laska, M. Munzer, F. Pfirsch, C. Schaeffer, and T. Schmidt : “The Field Stop IGBT (FS IGBT) A New Power Device Concept with a Great Improvement Potential”, Proc. of 12th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), pp. 355-358 (2000)

3. (3) A. Nakagawa : “Theoretical Investigation of Silicon Limit Characteristics of IGBT”, Proc. of 18th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), pp. 5-8 (2006)

4. (4) H. Ruthing, F. Hille, F.-J. Niedemostheide, H.-J. Schulze, and B. Brunner : “600V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology”, Proc. of 19th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), pp. 89-92 (2007)

5. (5) Y. Iwakaji, T. Matsudai, T. Sakano, and K. Takao : “Analysis of dependence of dVCE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor”, Jpn. J. Appl. Phys., Vol. 60, SBBD02 (2021)