600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology-Reference-Cited by-同舟云学术

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600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

Published:2007-05 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
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Author:

Ruthing H.,Hille F.,Niedernostheide F.-J.,Schulze H.-J.,Brunner B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4294904/4294905/04294939.pdf?arnumber=4294939

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure;Electronics;2023-12-20

2. Novel Diode Structure for Ultra-Law-Loss RC-IGBTs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

3. Introducing the New 600 V CIPOS^™ Tiny IM323 Intelligent Power Module for Home Appliances with 3-Phase Motor Drives;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

4. Silicon Power Devices;Springer Handbook of Semiconductor Devices;2022-11-11

5. Insulated Gate Bipolar Transistors (IGBTs);Advances in Semiconductor Technologies;2022-09-30

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