600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology-Reference-Cited by-同舟云学术

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600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

Published:2007-05 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
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Author:

Ruthing H.,Hille F.,Niedernostheide F.-J.,Schulze H.-J.,Brunner B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4294904/4294905/04294939.pdf?arnumber=4294939

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RC-IGBT snapback suppression using silicon germanium collector regions;Journal of Power Electronics;2024-07-18

2. 16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage;IEEE Electron Device Letters;2024-06

3. Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position;Microelectronics Journal;2024-05

4. Switching Loss Reduction in IGBTs by Multi-gate Control;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

5. Grid-patterned trench insulated gate bipolar transistor for 1.2 kV hybrid/plug-in hybrid electric vehicle silicon power devices;Japanese Journal of Applied Physics;2024-01-05

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