Analysis of dependence of dV CE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor-Reference-Cited by-同舟云学术

Analysis of dependence of dV CE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor

Published:2021-01-07 Issue:SB Volume:60 Page:SBBD02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwakaji Yoko,Matsudai Tomoko,Sakano Tatsunori,Takao Kazuto

Abstract

Abstract The double-gate drive is a remarkable gate control technique for dramatically reducing turn-off loss in Si-insulated gate bipolar transistors (IGBT) by increasing dV CE/dt. However, no detailed analysis of the difference of turn-off mechanism according to the difference in dV CE/dt between double-gate drive and conventional gate drive has been reported. The double-gate (DG) drive allows the dV CE/dt of IGBTs to increase beyond the maximum dV CE/dt of 7000 V μs−1 in conventional gate drives. Furthermore, the influence of relations between gate-drive timings and dV CE/dt on turn-off operations were confirmed in the case of three different DG IGBT structures.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/abd29f/pdf

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