An innovative silicon power device (i-Si) through time and space control of a stored carrier (TASC)-Reference-Cited by-同舟云学术

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An innovative silicon power device (i-Si) through time and space control of a stored carrier (TASC)

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Mori Mutsuhiro,Miyoshi Tomoyuki,Furukawa Tomoyasu,Takeuchi Yujiro,Hotta Yusuke,Shiraishi Masaki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393717.pdf?arnumber=8393717

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-conductivity IGBT with Time and Space Control of Stored Carrier (TASC HiGT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01

2. Structural parameter analysis on 6.5 kV integrated time and space carrier controllable dual-gate HiGT (i-TASC);Japanese Journal of Applied Physics;2023-06-01

3. Integrated Time and Space Carrier Controllable HiGT (i-TASC) with Widely Designable Backside Technology;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

4. 4.5 kV Double-gate RC-IEGT with Hole Control Gate;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

5. Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology;2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2021-05-30

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