On the physics link between time-dependent gate breakdown and electroluminescence in Schottky-type p-GaN gate HEMTs-Reference-Cited by-同舟云学术

On the physics link between time-dependent gate breakdown and electroluminescence in Schottky-type p-GaN gate HEMTs

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Tang Xi¹,Liu Yuhan²,Wang Huan¹,Dong Dan²,Yin Yulian¹,Lin Yan²,Li Haoran¹,Chen Pingfan¹,Li Hui¹,Huang Zhen¹,Cao Wenping¹,Li Baikui²,Hu Cungang¹

Affiliation:

1. Anhui University,Institute of Physical Science and Information Technology & School of Electrical Engineering and Automation,Hefei,China,230601

2. Shenzhen University,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering,Shenzhen,China,518063

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813615.pdf?arnumber=9813615

Reference23 articles.

1. Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias

2. Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs

3. Normally off Al₂O₃–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

4. Soft breakdown and hard breakdown in ultra-thin oxides

5. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

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