Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias-Reference-Cited by-同舟云学术

Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias

Published:2020-07-27 Issue:4 Volume:117 Page:043501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tang Xi¹,Qiu Ran¹,Liu Yuhan¹,Li Baikui¹^ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, China

Funder

Young Scientists Fund

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0011831

Reference37 articles.

1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2. GaN-on-Si Power Technology: Devices and Applications

3. The 2018 GaN power electronics roadmap

4. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

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