Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate-Reference-Cited by-同舟云学术

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Published:2018-04-30 Issue:18 Volume:112 Page:182106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Usami Shigeyoshi¹,Ando Yuto¹,Tanaka Atsushi²³,Nagamatsu Kentaro²,Deki Manato²,Kushimoto Maki¹,Nitta Shugo²,Honda Yoshio²,Amano Hiroshi²³⁴⁵,Sugawara Yoshihiro⁶,Yao Yong-Zhao⁶,Ishikawa Yukari²⁶^ORCID

Affiliation:

1. Graduate School of Engineering, Nagoya University, Furo-cho C3-1, 464-8603 Nagoya, Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, 464-8603 Nagoya, Japan

3. National Institute of Material Science, Sengen 1-2-1, 305-0047 Tsukuba, Ibaraki, Japan

4. Akasaki Research Center, Nagoya University, Furo-cho, 464-8603 Nagoya, Japan

5. Venture Business Laboratory, Nagoya University, Furo-cho, 464-8603 Nagoya, Japan

6. Japan Fine Ceramics Center, 2-4-1, Mutsuno, Atsuta, 456-8587 Nagoya, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5024704

Reference34 articles.

1. Growth and characterization of GaN PiN rectifiers on free-standing GaN

2. High-breakdown-voltage pn-junction diodes on GaN substrates

3. GaN-on-Si Vertical Schottky and p-n Diodes

4. High breakdown voltage p-n diodes on GaN on sapphire by MOCVD

5. High-voltage GaN pin vertical rectifiers with 2 [micro sign]m thick i-Layer

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