Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

Abstract

Position-dependent three-dimensional reciprocal space mapping (RSM) by nanobeam x-ray diffraction (nanoXRD) was performed to reveal the strain fields produced around individual threading dislocations (TDs) in GaN substrates. The distribution and Burgers vector of TDs for the nanoXRD measurements were confirmed by prerequisite analysis of multi-photon excited photoluminescence and etch pit methods. The present results demonstrated that the nanoXRD can identify change in the lattice plane structure for all types of TDs, i.e., edge-, screw-, and mixed TDs with the Burgers vector of b = 1a, 1c and 1m + 1c. Strain tensor components related to edge and/or screw components of the TDs analyzed from the three-dimensional RSM data showed a nearly symmetrical strained region centered on the TD positions, which were in good agreements with simulation results based on the isotropic elastic theory using a particular Burgers vector. The present method is beneficial in that it allows non-destructive analysis of screw components of TDs that tend to contribute to leakage characteristics and are not routinely accessible by conventional structural analysis. These results indicate that nanoXRD could be a powerful way to reveal three-dimensional strain fields associated with arbitrary types of TDs in semiconductor materials, such as GaN and SiC.