Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs-Reference-Cited by-同舟云学术

Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs

Published:2022-05 Issue:5 Volume:69 Page:2287-2292
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Huan¹^ORCID,Lin Yan²^ORCID,Jiang Junsong¹,Dong Dan²,Ji Fengwei¹,Zhang Meng²^ORCID,Jiang Ming¹,Gan Wei¹,Li Hui¹,Wang Maojun³^ORCID,Wei Jin³,Li Baikui²^ORCID,Tang Xi¹^ORCID,Hu Cungang¹^ORCID,Cao Wenping¹

Affiliation:

1. Institute of Physical Science and Information Technology and the School of Electrical Engineering and Automation, Anhui University, Hefei, China

2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China

3. School of Integrated Circuits, Peking University, Beijing, China

Funder

National Natural Science Foundation of China

Anhui Innovation Project

Information Materials and Intelligent Sensing Laboratory of Anhui Province

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09739803.pdf?arnumber=9739803