Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
Author:
Affiliation:
1. TU Ilmenau
2. Notre Dame University
3. Universidad de Cádiz
4. Université Montpellier 2
5. Technische Universität Ilmenau
6. Fraunhofer Institut für Angewandte Festkörperphysik
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.457-460.297.pdf
Reference10 articles.
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3. J. Pezoldt, Ch. Förster, P. Weih and P. Masri: Appl. Surf. Sci. Vol. 184, (2001), p.79.
4. Th. H. de Keijser, E. J. Mittemeijer and H. C. Rozendaal: J. Appl. Cryst. Vol. 16 (1983), p.309.
5. R. T. Hola, P. H. Klein and P. E. R. Nordquist: Jr., J. Appl. Phys. Vol. 60 (1986), p.1479.
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1. Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition;physica status solidi (a);2021-10-31
2. Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface;Thin Solid Films;2018-09
3. Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111);Applied Physics Letters;2005-07-25
4. SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si;Surface and Interface Analysis;2004-08
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