SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si-Reference-Cited by-同舟云学术

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SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si

Published:2004-08 Issue:8 Volume:36 Page:969-972
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Pezoldt J.,Zgheib Ch.,Masri P.,Averous M.,Morales F. M.,Kosiba R.,Ecke G.,Weih P.,Ambacher O.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition;physica status solidi (a);2021-10-31

2. Reconstruction of concentration profiles in heterostructures with chemically modified interfaces;Journal of Applied Physics;2018-06-07

3. Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si;Journal of Computational and Theoretical Nanoscience;2012-11-01

4. Infrared analysis of the effect of Ge at the interface between 3C–SiC and Si;Diamond and Related Materials;2012-02

5. Effect of different Ge predeposition amounts on SiC grown on Si (111);Applied Surface Science;2009-03

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