Infrared analysis of the effect of Ge at the interface between 3C–SiC and Si-Reference-Cited by-同舟云学术

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Infrared analysis of the effect of Ge at the interface between 3C–SiC and Si

Published:2012-02 Issue: Volume:22 Page:23-28
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Kazan M.,Tabbal M.,Masri P.

Funder

URB, American University of Beirut

CNRSL

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Calculated elastic constants and deformation potentials of cubic SiC

2. Fabrication of monocrystalline 3C–SiC resonators for MHz frequency sensors applications

3. Silicon carbide for microelectromechanical systems

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1. Tuning the infrared dielectric and plasmonic properties of ZnO thin films on glass;Infrared Physics & Technology;2023-01

2. Characterization of SiC nanowires prepared on C/C composite without catalyst by CVD;Transactions of Nonferrous Metals Society of China;2015-10

3. Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1−xN films using infrared spectroscopy;Journal of Applied Physics;2013-08-07

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