Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1999858
Reference16 articles.
1. Residual stress and texture in poly-SiC films grown by low-pressure organometallic chemical-vapor deposition
2. Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition
3. Scanning tunneling microscopy atomic resolution images of sulfur overlayers on Fe(111)
4. The Influence of Surface Preparation on the Properties of SiC on Si(111)
5. Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces
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