Growth and doping of silicon carbide with germanium: a review-Reference-Cited by-同舟云学术

Growth and doping of silicon carbide with germanium: a review

Published:2021-03-24 Issue: Volume: Page:1-18
ISSN:1040-8436
Container-title:Critical Reviews in Solid State and Materials Sciences
language:en
Short-container-title:Critical Reviews in Solid State and Materials Sciences

Author:

Ferro Gabriel¹

Affiliation:

1. Laboratoire des Multimatériaux et Interfaces, Université de Lyon, Université Claude Bernard Lyon 1, CNRS, Villeurbanne, France

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,General Chemical Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10408436.2021.1896476

Reference108 articles.

1. Growth and doping of bulk GaN by hydride vapor phase epitaxy*

2. Vanadium doping in 4H-SiC epitaxial growth for carrier lifetime control

3. Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

4. Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

5. Fermi level position, Coulomb gap and Dresselhaus splitting in (Ga,Mn)As

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1. Homogeneous Growth of 3C-SiC Crystal Surface at Solid–Liquid Interface and Its Competitive Relationship;JOM;2024-04-23

2. Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC;RSC Advances;2024

3. Impurities and defects in 4H silicon carbide;Applied Physics Letters;2023-05-01

4. A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium;Materials Science Forum;2022-05-31