Fermi level position, Coulomb gap and Dresselhaus splitting in (Ga,Mn)As
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep27266.pdf
Reference57 articles.
1. Ohno, H. et al. (Ga,Mn)As: a new diluted magnetic semiconductor based on GaAs. Appl. Phys. Lett. 69, 363–365 (1996).
2. Dietl, T. & Ohno, H. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev. Mod. Phys. 86, 187–251 (2014).
3. Jungwirth, T. et al. Spin-dependent phenomena and device concepts explored in (Ga,Mn)As. Rev. Mod. Phys. 86, 855–896 (2014).
4. Jungwirth, T. et al. Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover. Phys. Rev. B 76, 125206 (2007).
5. Samarth, N. Battle of the bands. Nat. Mater. 11, 360–361 (2012).
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