A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
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Published:2022-05-31
Issue:
Volume:1062
Page:523-527
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Renz A. Benjamin1, Vavasour Oliver J.1, Rommel Mathias2ORCID, Baker G.W.C.1, Gammon Peter M.1, Dai Tian Xiang1, Li Fan1, Antoniou Marina1, Mawby Phillip A.1, Shah Vish Al1
Affiliation:
1. University of Warwick 2. Fraunhofer IISB
Abstract
A systematic germanium (Ge) and vanadium (V) study on 4H-SiC epitaxial layers is presented. Electrical results of TLM structures which were fabricated on these layers revealed that highly-doped Ge and V-implanted layers showed extremely low specific contact resistivity, down to 2 x 10-7 Ω.cm2. Current flow in the conducting state of Schottky barrier diodes has been successfully suppressed in some implanted layers, with highly V doped samples showing current density values of approximately 1 x 10-5 Acm-2 at 10 V. DLTS spectra reveal the presence of germanium and vanadium centers in the respective samples as well as novel peaks which are likely related to the formation of a novel GeN center.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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