CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers
Author:
Affiliation:
1. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
2. Science Institute, University of Iceland, IS-107 Reykjavik, Iceland
3. Norstel AB, Ramshällsvägen 15, SE-602 38 Norrköping, Sweden
Funder
Energimyndigheten
Electronic Components and Systems for European Leadership
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5057389
Reference26 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
3. Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer
4. Semi‐insulating 6H–SiC grown by physical vapor transport
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