Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1719270
Reference11 articles.
1. Opportunities and Technical Strategies for Silicon Carbide Device Development
2. Growth and Properties of β‐SiC Single Crystals
3. High-field transport in wide-band-gap semiconductors
4. Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
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