Infrared reflectance evaluation of chemically vapor deposited β‐SiC films grown on Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337275
Reference25 articles.
1. Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystals
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3. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
4. Infrared Properties of Cubic Silicon Carbide Films
5. Pressure dependence of the optical phonons and transverse effective charge in3C-SiC
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