Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth morphology and crystallographic orientation of β-SiC films formed by chemical conversion
2. Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer
3. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates
4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
5. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
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